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Product Description:
This TO-220-3L package transistor is designed for medium power linear switching applications and is a perfect complement to similar devices in its class.
Key Features:
- PNP Transistor with a robust design for various applications.
Maximum Ratings:
- Collector-Base Voltage (VCBO): -40V to -100V depending on the variant.
- Collector-Emitter Voltage (VCEO): Matches VCBO ratings.
- Emitter-Base Voltage (VEBO): -5V across all variants.
- Continuous Collector Current (IC): Up to 6A.
- Collector Power Dissipation (PC): 2W.
- Junction Temperature (TJ): 150°C.
- Storage Temperature Range (Tstg): -55°C to +150°C.
Electrical Characteristics:
- Collector-Base Breakdown Voltage (V(BR)CBO): Varies from -40V to -100V.
- Collector-Emitter Breakdown Voltage (V(BR)CEO): Also varies from -40V to -100V.
- Collector Cut-Off Current (ICBO): Below 0.7 mA for all variants at specified conditions.
- Emitter Cut-Off Current (IEBO): -1 mA.
- DC Current Gain (hFE): Ranges from 15 to 75 depending on conditions.
- Collector-Emitter Saturation Voltage (VCE(sat)): -1.5V at 6A, 0.6A base current.
- Base-Emitter Voltage (VBE): -2V at 6A collector current.
- Transition Frequency (fT): 3MHz at specified conditions.
Physical Dimensions:
- Package dimensions provided in both millimeters and inches for ease of reference.