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Product Description:
This 1200V / 25A Trench Field Stop IGBT is designed for high-reliability applications. Key features include:
- High breakdown voltage for enhanced durability.
- Trench-Stop Technology for a tight parameter distribution and temperature stability.
- Improved short circuit withstand time of 10μs and low VCE(SAT) for efficient operation.
- Easy parallel switching capability due to a positive temperature coefficient in VCE(SAT).
- Enhanced avalanche capability for robust performance.
Ideal for use in Frequency Converters and Motor Drives.
Technical Highlights:
- Collector-Emitter Breakdown Voltage (VCE): 1200V
- DC Collector Current (IC): Up to 50A at 25°C, 25A at 100°C
- Gate-Emitter Voltage (VGE): Continuous - ±20V, Transient - ±30V
- Operating Junction Temperature (Tj): -40°C to +150°C
- Thermal Resistance (Rθ): Junction-case - 0.5 K/W for IGBT, 1 K/W for Diode
Electrical Characteristics (Tj= 25°C):
- Static Collector-Emitter Breakdown Voltage (BVCES): 1200V
- Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.65V at 25°C, 2.05V at 150°C
- Gate-Emitter Leakage Current (IGES): ≤ 100nA
- Transconductance (gfs): Approximately 20S
- Input Capacitance (Cies): Typically 2340pF at 1MHz
Sunil
Reviewed in India on April 22, 2022
Served the purpose.
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