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Your cart is empty. BOJACK IRF530N MOSFET is a field effect transistor that can be
widely used in analog circuits and digital circuits.
Basic parameters:
The IRF530N is available in a TO-220AB package
On-state resistance Rds(on): 0.09 ohm
Voltage Vgs highest: ±20V
Number of stitches: 3
Operating Temperature:-55 °C to +175 °C
Thermal resistance junction to case A: 0.47°C/W
Voltage Vds Typical: 100V
Current Id continuous: 17A
Current Idm pulse: 60A
Surface Mount Device: Through Hole Mounting
Lead-free environmental protection
Breakerbroke23
Reviewed in the United States on July 29, 2024
They did not perform as well as the OEM finals. These test low. BEWARE
Argemiro DIAZ
Reviewed in the United States on June 27, 2024
Excellent seller, quick shipping, as described, great deal, I recommend!. Thank you!.
Doccpu
Reviewed in the United States on September 19, 2023
If you build the HF amps and other mosfet projects you probably pop them alot and its great to be able to get them inexpensivley and in quantities.
Charles A.
Reviewed in the United States on July 4, 2023
They will handle a lot of power BUT take care not to operate into a high SWR---then it goes ---pfffft
GadgetsNgoodies
Reviewed in the United States on July 12, 2023
The FET's are fine if you want to use them for non critical applications such as relay drivers or simple switches. However since they are anything but original IRF530s don't use them in any critical application. Testing them with a commercial tester shows that the technical data do not agree with the data sheet published by OnSemi. If you use them in RF amplifier service be aware that the gate capacity is twice that of original transistors and they may or may not work on the higher bands.
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