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Your cart is empty. The IRF4905 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.
Power Dissipation:200w
On Resistance Rds(on):0.02ohm
Continuous Drain Current Id:-74A
Drain Source Voltage Vds:-55V
Temperature range:-55 °C to +175 °C
Package include:
10pcs*IRF4905
Customer
Reviewed in the United States on March 30, 2023
Burn at lower rated current (3 amp) even using heatsink and fan
Michael Redding
Reviewed in the United States on September 20, 2022
Good product.
Matty's Fam
Reviewed in the United States on February 1, 2022
This product clearly states there are 10 pcs of 4905. However, my sealed package only had 7pcs. ugg.
Boquete Apartments
Reviewed in the United States on January 28, 2022
Don't buy. If the SD resistance of your P-channel MOSFET matters at all you better use the original TI product. I measured half of those that I had bought, then gave up. Each and everyone I measured had a Source-Drain voltage drop of more than 2.2 V at a Drain current of 3.1A. This means about 700mOhm SD resistance and wasted power of 6.8W that has to be cooled away so it does not destroy the MOSFET.I bought also some real IRF4905 and measured 75mV @ 3.1A, i.e. Source-Drain Resistance of about 24 mOhm and power consumption of about 0.23W, which does not require particular cooling. This corresponds very well to the datasheet which says So, unless you just want to play around with MOSFETs and don't want to build anything serious, DON'T BUY these. It's wasted money.
Andrew Ferg
Reviewed in the United States on June 18, 2020
TO220 package overheats at 50W. Works fine for smaller loads.
Angel Le
Reviewed in the United States on April 6, 2020
WE TESTED ONE BY ONE IN OUR "MULTI-FUNCTION TESTER - TC1" AND THE 10 MOSFETS PASSED THE TESTS GIVING AS A RESULT THAT ALL OF THEM WERE IN PERFECT CONDITION AND WE EVEN COMPARED ACCORDING TO THE MANUFACTURER'S SPECIFICATIONS AND GIVEN EXACTLY THE SAME MEASUREMENT PARAMETERS IN THE DIGITAL TESTER READING. WE'RE HAPPY! & FAST SECURE SHIPPING TOO IN ELECTROSTATIC BAG. . . WE RECOMMEND IT 100% BRAND NEW
S. A. ROBBINS
Reviewed in the United States on October 16, 2019
Good low resistance FET but not .02 ohms. In repeated tests, the RDSon was .06 ohms. That is substantially higher than claimed .02 ohms. I was counting on .02 ohms for my circuit application.
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