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Conductive 4H/6H Silicon Carbide SiC Platelets Single Crystal Substrate Crystal wafers, 10x10mm, Pack of 1 (T: 350μm, 4H-N Conduction Type)

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$69.99

$ 29 .99 $29.99

In Stock

1.Size:4h-n Conduction Type


2.MaterialType:T: 350μm


  • Specification: 10x10cm, Thickness(T) 350/430/1000 μm. Conductive/Crystal Type
  • Silicon carbide platelets, as semiconductor substrate materials, can be used to produce silicon carbide based power devices and microwave RF devices through epitaxial growth, device manufacturing, and other processes. They are important foundational materials for the development of the third-generation semiconductor industry.


Specification: 10x10cm, thickness 350/430/1000 μm. Conductive/Crystal Type
Silicon carbide platelets, as semiconductor substrate materials, can be used to produce silicon carbide based power devices and microwave RF devices through epitaxial growth, device manufacturing, and other processes. They are important foundational materials for the development of the third-generation semiconductor industry.


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